... gate array 门阵列 gate charge 选通电极充电,门控充电 gate charge curve 选通电极充电曲线,门控充电曲线 ...
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gate charge curve 选通电极充电曲线 ; 门控充电曲线
terminal gate charge 码头闸口费
the gate charge 门极电荷
Gate-Charge Characteristics 栅极电荷特性
Gate charge capacity 门极充电电荷
Low Gate Charge 低栅电荷
Improved Gate Charge 改进的栅极电荷
gate charge retention 门极电荷保持
·2,447,543篇论文数据,部分数据来源于NoteExpress
In order to describe the characteristics of VDMOS device more intuitively, this paper mainly focuses on the gate charge test.
为了更直观地描述低压大电流VDMOS器件特性,对器件栅电荷特性进行了测量和提取。
Impact ionization arises from a charge injector (25), defining a virtual diode (30) in the substrate (20) of a floating gate charge storage transistor (11).
碰撞电离通过一在一浮栅电荷存储晶体管(11)的衬底(20)中限定一虚拟二极管(30)的电荷注入器(25)而产生。
This article takes gate charge characteristics into account and then introduces some methods for calculating output performance of drivers used for switching IGBTs.
本文就利用栅极电荷特性的考虑,介绍了一些计算用于开关igbt的驱动器输出性能的方法。
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